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Proceedings Paper

Chemical and electrical analysis of CdS interlayers on InP and related materials
Author(s): Helen M. Dauplaise; Kenneth Vaccaro; Andrew Davis; George O. Ramseyer; Stephen M. Spaziani; Joseph V. Beasock; Eric A. Martin; Joseph P. Lorenzo
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Paper Abstract

Cadmium sulfide (CdS) layers were deposited from aqueous solutions of thiourea, cadmium sulfate, and ammonia on (100) InP, InGaAs, and InAlAs. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and atomic force microscopy (AFM) were used to investigate the structural and chemical nature of the deposited CdS layer and the CdS/semiconductor interface. XPS showed that the deposition process effectively removes existing native oxides on InP and InAlAs before CdS growth occurs. Capacitance-voltage measurements of metal-insulator- semiconductor (MIS) capacitors were used to investigate the interface- state density of samples with and without CdS films between InP and a deposited insulator. CdS interlayers were found to reduce both the hysteresis and the interface-state density of the MIS capacitors. Applications of CdS interlayers for various photonic devices will be discussed.

Paper Details

Date Published: 30 June 1995
PDF: 10 pages
Proc. SPIE 2481, Photonic Device Engineering for Dual-Use Applications, (30 June 1995); doi: 10.1117/12.212724
Show Author Affiliations
Helen M. Dauplaise, Air Force Rome Lab. (United States)
Kenneth Vaccaro, Air Force Rome Lab. (United States)
Andrew Davis, Air Force Rome Lab. (United States)
George O. Ramseyer, Air Force Rome Lab. (United States)
Stephen M. Spaziani, Air Force Rome Lab. (United States)
Joseph V. Beasock, Air Force Rome Lab. (United States)
Eric A. Martin, Air Force Rome Lab. (United States)
Joseph P. Lorenzo, Air Force Rome Lab. (United States)


Published in SPIE Proceedings Vol. 2481:
Photonic Device Engineering for Dual-Use Applications
Andrew R. Pirich, Editor(s)

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