Share Email Print
cover

Proceedings Paper

Electroabsorption and carrier dynamics in (Ga,In)As/(Al,In)As asymmetric double quantum wells
Author(s): Mark F. Krol; Michael J. Hayduk; Richard P. Leavitt; John T. Pham; Sergey Yu. Ten; Brian P. McGinnis; Galina Khitrova; Nasser Peyghambarian
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We report enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As Asymmetric Double Quantum Wells (ADQWs) by the use of real space electron transfer. The electron concentration in both the wide and narrow wells is investigated by field dependent absorption and photoluminescence spectroscopy. Additionally, a study of carrier dynamics in these ADQW structures indicates that electrons tunnel between the coupled wells on picosecond time-scales.

Paper Details

Date Published: 30 June 1995
PDF: 8 pages
Proc. SPIE 2481, Photonic Device Engineering for Dual-Use Applications, (30 June 1995); doi: 10.1117/12.212718
Show Author Affiliations
Mark F. Krol, Air Force Rome Lab. (United States)
Michael J. Hayduk, Air Force Rome Lab. (United States)
Richard P. Leavitt, Army Research Lab. (United States)
John T. Pham, Army Research Lab. (United States)
Sergey Yu. Ten, Optical Sciences Ctr./Univ. of Arizona (United States)
Brian P. McGinnis, Optical Sciences Ctr./Univ. of Arizona (United States)
Galina Khitrova, Optical Sciences Ctr./Univ. of Arizona (United States)
Nasser Peyghambarian, Optical Sciences Ctr./Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 2481:
Photonic Device Engineering for Dual-Use Applications
Andrew R. Pirich, Editor(s)

© SPIE. Terms of Use
Back to Top