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Proceedings Paper

Photonic excitations in doped bismuth silicon oxide: Bi12SiO20
Author(s): Steven P. Hotaling
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Paper Abstract

Photonic excitations of the electronic spin system in doped sillenite phase Bismuth Silicon Oxide (BSO) Bi12SiO20 are presented. Dynamic metastability is explained using a Two Level system (TLS) model for photonic perturbation of the spin Hamiltonian.

Paper Details

Date Published: 30 June 1995
PDF: 8 pages
Proc. SPIE 2481, Photonic Device Engineering for Dual-Use Applications, (30 June 1995); doi: 10.1117/12.212717
Show Author Affiliations
Steven P. Hotaling, Air Force Rome Lab. (United States)

Published in SPIE Proceedings Vol. 2481:
Photonic Device Engineering for Dual-Use Applications
Andrew R. Pirich, Editor(s)

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