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Proceedings Paper

Effects of carrier diffusion on thermal properties of proton-implanted top-surface-emitting lasers
Author(s): Robert P. Sarzala; Wlodzimierz Nakwaski; Marek Osinski
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Paper Abstract

A comprehensive, 3D, thermal-electrical self-consistent finite-element model is described and used to investigate thermal properties of GaAs-AlGaAs proton-implanted top-surface-emitting lasers. Special attention is paid to carrier diffusion within the layer containing the active region and to its influence on temperature profiles. In the model, an analytical approximation is used to describe the 3D current spreading between the annular top contact and the broad- area bottom contact. Temperature dependence of many device and material parameters is included. Multiple heat sources are taken into consideration. The carrier diffusion equation, including injection-current generation, ambipolar diffusion as well as bimolecular and spontaneous recombination terms, is solved numerically using the finite-element method for the layer containing the active region. The results indicate that carrier diffusion strongly influences the distribution of main heat sources. As a result, both current-spreading and heat- spreading phenomena are modified.

Paper Details

Date Published: 19 June 1995
PDF: 22 pages
Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212532
Show Author Affiliations
Robert P. Sarzala, Technical Univ. of Lodz (Poland)
Wlodzimierz Nakwaski, Univ. of New Mexico (United States)
Marek Osinski, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 2399:
Physics and Simulation of Optoelectronic Devices III
Marek Osinski; Weng W. Chow, Editor(s)

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