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Proceedings Paper

Filamentation, lateral field instability, and six-wave mixing in semiconductor lasers
Author(s): Alexander P. Bogatov
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Paper Abstract

Electromagnetic field inside a broad-area diode laser is considered as a system of counterpropagating waves. A study of the lateral field instability was performed by using a 6- wave mixing theory. It is shown that perturbation waves with the tilted angle (phi) <EQ 1.2 degrees inside the active region, and respectively, with the side lobes of the far-field pattern of less than 4 degrees, have the greatest growth increment. These waves produce lateral intensity modulation with the period 10 divided by 30 micrometers for the 0.85 micrometers lasing wavelength. The appearance of such waves corresponds to the instability threshold of a homogeneous lateral distribution of optical power in a diode laser. The calculation results explain an experimental observation of the chaos in lateral transversal intensity distribution in usual broad-area diode lasers. The theory allows a stability analysis of the homogeneous field distribution in diode lasers of a novel design.

Paper Details

Date Published: 19 June 1995
PDF: 12 pages
Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212519
Show Author Affiliations
Alexander P. Bogatov, P.N. Lebedev Physics Institute (Russia)


Published in SPIE Proceedings Vol. 2399:
Physics and Simulation of Optoelectronic Devices III
Marek Osinski; Weng W. Chow, Editor(s)

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