Share Email Print
cover

Proceedings Paper

Time-dependent model for vertical-cavity surface-emitting laser
Author(s): Lester E. Thode; George Csanak; Robert S. Hotchkiss; Charles M. Snell; M. Campbell
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Two models have been developed to simulate a vertical-cavity surface emitting laser. The first model is a 2D time-dependent bulk dielectric and absorption coefficients. These bulk coefficients depend upon the material, lattice temperature, and carrier concentration. This field model is coupled with a frequency-dependent gain model that describes the quantum well regions in the time domain. Treatment of frequency-dependent media in a finite-difference time-domain code is computationally intensive. On the other hand, because the volume of the active region is small relative to the volume of the distributed laser cavity, the computational overhead is reasonable. A semi-empirical transport model is used to describe the bult transport, which drives the quantum well transport. In addition, the semi-empirical model provides a spatial distribution for the lattice temperature and carrier concentrations. The second model is a 3D solution of Maxwell's equations. The 3D model can be used for cold cavity calculations. The 2D code generates the dielectric and absorption coefficients assuming azimuthal symmetry, providing the initial conditions for the 3D calculation.

Paper Details

Date Published: 19 June 1995
PDF: 12 pages
Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212512
Show Author Affiliations
Lester E. Thode, Los Alamos National Lab. (United States)
George Csanak, Los Alamos National Lab. (United States)
Robert S. Hotchkiss, Los Alamos National Lab. (United States)
Charles M. Snell, Los Alamos National Lab. (United States)
M. Campbell, PASTDCO (United States)


Published in SPIE Proceedings Vol. 2399:
Physics and Simulation of Optoelectronic Devices III
Marek Osinski; Weng W. Chow, Editor(s)

© SPIE. Terms of Use
Back to Top