Share Email Print

Proceedings Paper

Negative differential gain in strained-layer InGaAs quantum well laser diodes
Author(s): Petr Georgievich Eliseev; Aleksandr E. Drakin
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Experimental evidences and modeling calculations are given for the existence of negative differential mode gain in ridge-waveguide laser diodes on the base of strained-layer InGaAs/GaAs quantum-well structures. The phenomenon is found to be related to a mode formation in an active 2D waveguide with monotonic increase of the material gain. The mode gain is calculated in single- and double-QW laser structures at various waveguide parameters including variation of the lateral built-in index step.

Paper Details

Date Published: 19 June 1995
PDF: 5 pages
Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212506
Show Author Affiliations
Petr Georgievich Eliseev, P.N. Lebedev Physics Institute (Russia)
Aleksandr E. Drakin, P.N. Lebedev Physics Institute (Russia)

Published in SPIE Proceedings Vol. 2399:
Physics and Simulation of Optoelectronic Devices III
Marek Osinski; Weng W. Chow, Editor(s)

© SPIE. Terms of Use
Back to Top