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Parasitic effects in the period doubling of semiconductor lasers
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Paper Abstract

In this paper we study the behavior of a single mode semiconductor laser under strong signal modulation. To describe the semiconductor laser, we employed the standard rate equation model, commonly used for this type of analysis. A continuation method is used in order to study the evolution of the behavior of the laser as the modulation index is increased. The bifurcation points are determined using Floquet Theory. In order to introduce the parasitic effects, we have used the equivalent circuit model. First, the intrinsic model is used to verify the results obtained with the continuation method and after, we introduce the laser parasitics to obtain new results on the dynamic behavior.

Paper Details

Date Published: 19 June 1995
PDF: 11 pages
Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212495
Show Author Affiliations
Guillermo Carpintero, Univ. Carlos III de Madrid (Spain)
Horacio Lamela, Univ. Carlos III de Madrid (Spain)

Published in SPIE Proceedings Vol. 2399:
Physics and Simulation of Optoelectronic Devices III
Marek Osinski; Weng W. Chow, Editor(s)

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