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Proceedings Paper

Modeling of gain for InGaAsP-based lasers
Author(s): Mark S. Hybertsen; Rudolf F. Kazarinov; Gene A. Baraff; David A. Ackerman; Gleb E. Shtengel; Paul A. Morton; Tawee Tanbun-Ek; Ralph A. Logan
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Paper Abstract

Experimental and theoretical results for gain in bulk and multiquantum well active layer 1.3 micrometers InGaAsP based lasers are reported. Gain, loss, transparency energy, and carrier density have been measured in the subthreshold regime at room temperature and elevated temperatures. Gain has been calculated using an eight band k(DOT)p model for the electronic structure and a conventional density matrix formulation. The calculated and experimental results for the gain spectra, the gain versus density, the chemical potential (quasifermi level separation) versus density, and the gain versus chemical potential are compared at room temperature and 85 C. There is aagreement at several points, but the model substantially underestimates the temperature sensitivity of the gain which has been found in the experiments to be an important factor in the overall temperature sensitivity of threshold current.

Paper Details

Date Published: 19 June 1995
PDF: 14 pages
Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212488
Show Author Affiliations
Mark S. Hybertsen, AT&T Bell Labs. (United States)
Rudolf F. Kazarinov, AT&T Bell Labs. (United States)
Gene A. Baraff, AT&T Bell Labs. (United States)
David A. Ackerman, AT&T Bell Labs. (United States)
Gleb E. Shtengel, AT&T Bell Labs. (United States)
Paul A. Morton, AT&T Bell Labs. (United States)
Tawee Tanbun-Ek, AT&T Bell Labs. (United States)
Ralph A. Logan, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 2399:
Physics and Simulation of Optoelectronic Devices III
Marek Osinski; Weng W. Chow, Editor(s)

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