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Proceedings Paper

Resistivity and deep-level investigations of detector-grade CdTe: a comparison of different growth techniques
Author(s): Dirk G. Ebling; Clemens Eiche; Michael Fiederle; Wolfgang Joerger; M. Laasch; Manfred Salk; Ralf Schwarz; Klaus-Werner Benz
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Paper Abstract

The electrical properties of semi-insulating CdTe crystals were characterized considering the application of the material as a room temperature radiation detector. Requirement for the detector application is a high resistivity material which is achieved by the compensation of shallow levels by deep donors in the middle of the band gap. These deep donors are obtained by doping the CdTe crystals with titanium or vanadium or by the influence of chlorine and intrinsic defects like the antisite defect. The energies of the deep levels are within the range of 0.31 eV and 0.95 eV determined by photoinduced current spectroscopy and admittance measurements. To calculate the compensation effects we applied a model originally developed for semi-insulating GaAs. To form detectors with a high local resolution, homogeneous material is needed. Homogeneity was tested by time dependent charge measurements. While CdTe:Cl showed variations of about 20% other high resistivity materials could vary up to one order of magnitude across one wafer. The variation of resistivity in CdTe crystals could be attributed to the crystal growth by a combined segregation-compensation model.

Paper Details

Date Published: 15 June 1995
PDF: 8 pages
Proc. SPIE 2519, X-Ray and Ultraviolet Sensors and Applications, (15 June 1995); doi: 10.1117/12.211895
Show Author Affiliations
Dirk G. Ebling, Albert-Ludwigs-Univ. (Germany)
Clemens Eiche, Albert-Ludwigs-Univ. (Germany)
Michael Fiederle, Albert-Ludwigs-Univ. (Germany)
Wolfgang Joerger, Albert-Ludwigs-Univ. (Germany)
M. Laasch, Albert-Ludwigs-Univ. (Germany)
Manfred Salk, Albert-Ludwigs-Univ. (Germany)
Ralf Schwarz, Albert-Ludwigs-Univ. (Germany)
Klaus-Werner Benz, Albert-Ludwigs-Univ. (Germany)

Published in SPIE Proceedings Vol. 2519:
X-Ray and Ultraviolet Sensors and Applications
Richard B. Hoover; Mark Bennett Williams, Editor(s)

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