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Proceedings Paper

Laser-induced upset of HgCdTe IR detectors
Author(s): Vaidya Nathan
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Paper Abstract

The fluence of pulsed lasers of wavelength 4 and 10.6 microns necessary to induce one and two orders of magnitude temporary degradation in the R0A values of Hg0.7Cd0.3Te p/n infrared detectors at 100 K, and Hg0.78Cd0.22Te p/n infrared detectors at 40 K have been calculated. A nonparabolic energy-momentum relationship and temperature dependent energy gap of HgCdTe were used in this calculation. The R0A values used in this calculation were obtained by simultaneously including generation-recombination, diffusion and tunneling mechanisms.

Paper Details

Date Published: 30 May 1995
PDF: 8 pages
Proc. SPIE 2474, Smart Focal Plane Arrays and Focal Plane Array Testing, (30 May 1995); doi: 10.1117/12.210567
Show Author Affiliations
Vaidya Nathan, Air Force Phillips Lab. (United States)


Published in SPIE Proceedings Vol. 2474:
Smart Focal Plane Arrays and Focal Plane Array Testing
Marc Wigdor; Mark A. Massie, Editor(s)

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