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Proceedings Paper

Series of AZ-compatible negative photoresists
Author(s): Anya Voigt; Gabi Gruetzner; E. Sauer; S. Helm; T. Harder; Simone Fehlberg; Juergen Bendig
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Paper Abstract

A series of AZ-compatible negative photoresists composed of a novolak resin and azide sensitizers for the micro and nano-lithography is presented. The ma-N 2400 and ma-N 300 are sensitive to light of the deep UV region (248 nm, 254 nm, 308 nm), the ma-N 400 and ma-N 1400 are sensitive to light of the mid UV region, the latter has a high sensitivity to the i-line (365 nm). The thickness of the resist layers prepared by spin coating is up to 8 micrometers depending on the composition of the resist solution. All resists are non-swelling during aqueous alkaline development after exposure. Using special lithography, these photoresists have a resolution capability up to 0.1 micrometers . The resistance to wet etch solutions and to dry etch gases is superior and higher than that of the most positive resists based on novolak.

Paper Details

Date Published: 9 June 1995
PDF: 8 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210420
Show Author Affiliations
Anya Voigt, Micro Allresist GmbH (Germany)
Gabi Gruetzner, Micro Allresist GmbH (Germany)
E. Sauer, Micro Allresist GmbH (Germany)
S. Helm, Micro Allresist GmbH (Germany)
T. Harder, Micro Allresist GmbH (Germany)
Simone Fehlberg, Micro Allresist GmbH (Germany)
Juergen Bendig, Micro Allresist GmbH (Germany)

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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