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Proceedings Paper

New positive-tone deep-UV photoresist based on poly(4-hydroxystyrene) and an acid labile protecting group
Author(s): James T. Fahey; Will Conley; William R. Brunsvold; Dominic C. Yang; Wayne M. Moreau; George M. Jordhamo; Steve Pratt; Dale M. Crockatt; George J. Hefferon; Robert L. Wood
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Paper Abstract

Conventional acid catalyzed, chemically amplified DUV photoresists are susceptible to environmental contamination and post exposure delay effects resulting in `T-topping' and linewidth variation. These phenomena are directly relatable to uncontrolled diffusion of the photoactive acid generator within the photoresist or from the diffusion of basic contaminants into the resist. The diffusion process can be controlled by a combination of materials and processing optimization. This paper describes a new positive tone DUV photoresist based on poly(4-hydroxystyrene) protected with the isopropyloxycarbonyl (i-POC) functionality. This protecting group is considerably less acid labile than the tert-butyloxycarbonyl (t-BOC) group and the resulting polymer is considerably more thermally stable than a t-BOC protected poly(4-hydroxystyrene). As such, the i-POC based polymer is more amenable to processing at higher temperatures.

Paper Details

Date Published: 9 June 1995
PDF: 18 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210419
Show Author Affiliations
James T. Fahey, IBM Corp. (United States)
Will Conley, IBM Corp. (United States)
William R. Brunsvold, IBM Corp. (United States)
Dominic C. Yang, IBM Corp. (United States)
Wayne M. Moreau, IBM Corp. (United States)
George M. Jordhamo, IBM Corp. (United States)
Steve Pratt, IBM Corp. (United States)
Dale M. Crockatt, IBM Corp. (United States)
George J. Hefferon, IBM Corp. (United States)
Robert L. Wood, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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