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Proceedings Paper

Investigation into the origin of microbridging in chemically amplified negative-tone photoresists
Author(s): Leo L. Linehan; Randolph S. Smith; Judy Dorn; James T. Fahey; Wayne M. Moreau; Gary T. Spinillo; Erik A. Puttlitz; James P. Collins
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Paper Abstract

Microbridge formation in a CAMN photoresist we have developed is dependent on the ratio of dose to print (DTP) to dose to gel (DTG) as well as resist contrast. Photoresists formulated with poly(p-hydroxystyrene) (PHS) have a very high tendency to form microbridges when developed in 2.38 wt% TMAH due to high contrast and high DTP/DTG ratio. When photoresists formulated from PHS were developed in 1.2 wt% TMAH contrast and DTP/DTG ratio were reduced resulting in microbridging being nearly eliminated. Using this observation we developed an I-line CAMN photoresist with PHS type thermal stability and high resolution capabilities which can be developed in industry standard 2.38 wt% TMAH.

Paper Details

Date Published: 9 June 1995
PDF: 11 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210418
Show Author Affiliations
Leo L. Linehan, IBM Corp. (United States)
Randolph S. Smith, IBM Corp. (United States)
Judy Dorn, IBM Corp. (United States)
James T. Fahey, IBM Corp. (United States)
Wayne M. Moreau, IBM Corp. (United States)
Gary T. Spinillo, IBM Corp. (United States)
Erik A. Puttlitz, IBM Corp. (United States)
James P. Collins, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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