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Proceedings Paper

Modeling of a resist technology for sub-100-nm structuring
Author(s): Ulrich A. Jagdhold; Lothar Bauch
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Paper Abstract

An intralevel mix match resist technology is described using modeling and simulation methods. The two dimensional description of the process contains a Monte-Carlo calculation for the e-beam exposure, a model for the interaction of electrons with the resist, a simulation of the i-line exposure, a calculation for the silylation and for a final dry development step (O2-RIE). The simulation is supported by experiments where a structuring down to 50 nm is achieved.

Paper Details

Date Published: 9 June 1995
PDF: 5 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210417
Show Author Affiliations
Ulrich A. Jagdhold, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Lothar Bauch, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)


Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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