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Proceedings Paper

Dry resist material on base of perylene tetracarboxylic acid derivatives for laser lithography
Author(s): Vladimir Enokovich Agabekov; Victor Adamovich Azarko; Olga Petrovna Nevdakh
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Paper Abstract

Vacuum vapor deposited films (0.8 - 1.2 micrometers thickness) of perylene-3,4,9,10- tetracarboxylic acid (PTA) derivatives studied permit masks to be produced by laser vacuum projection lithography (LVPL) technique. The masks have submicron elements (0.4 - 0.6 micrometers ) and selectivity ranging from 7 to 15 during plasma chemical etching of Si, SiO2 and Al. Films based on diphenyl- and di-(p-chlorophenyl)-diimides possess the best lithographic and masking properties.

Paper Details

Date Published: 9 June 1995
PDF: 8 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210404
Show Author Affiliations
Vladimir Enokovich Agabekov, Institute of Physical Organic Chemistry (Belarus)
Victor Adamovich Azarko, Institute of Physical Organic Chemistry (Belarus)
Olga Petrovna Nevdakh, Institute of Physical Organic Chemistry (Belarus)


Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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