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Proceedings Paper

Modeling and simulation of the PRIME process using the SLITS simulator
Author(s): Declan McDonagh; Khalil I. Arshak; Arousian Arshak; Jules Braddell; Bhvanesh P. Mathur
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Paper Abstract

In this paper, a new method to calculate the silylation profile in the PRIME process is presented. New software modules have been added to the 2D simulator SLITS in order to simulate the silylation and dry developed profiles in the PRIME process. The silylation and dry developed profiles for the PRIME process are simulated and compared to experimental results. Simulations were carried out for both e-beam and DUV exposures. Under e-beam exposure, the maximum percentage error between the simulated and experimental results was 13%. Under DUV exposure, the silylation depth at the mask edge can be reduced by increasing the dose thus effectively controlling the resist linewidth. The depth of focus was found to be 0.4 micrometers .

Paper Details

Date Published: 9 June 1995
PDF: 11 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210402
Show Author Affiliations
Declan McDonagh, Univ. of Limerick (Ireland)
Khalil I. Arshak, Univ. of Limerick (Ireland)
Arousian Arshak, Univ. of Limerick (Ireland)
Jules Braddell, National Microelectronics Research Ctr. (Ireland)
Bhvanesh P. Mathur, Univ. of Limerick (Ireland)


Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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