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Proceedings Paper

Nonchemically amplified positive photoresist for synchrotron radiation x-ray lithography
Author(s): Daniel Bucca; Ari Aviram; David E. Seeger; Will Conley; William R. Brunsvold
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Paper Abstract

Iodine containing diazoquinone photoactive compounds (PAC) were synthesized and formulated with novolak and other resins in an effort to develop a positive photoresist for the synchrotron beam line at IBM's Advanced Lithography Facility. The studies focused on the effect of synchrotron radiation on the PACs themselves and in various halogenated resins. These materials were tested by exposing the resist materials to various doses of radiation and then measuring the loss of diazo from the PAC. An enhanced sensitivity x-ray (ESX) photoresist system was developed by combining an iodinated PAC with a novolak resin. ESX was compared to a conventional DQ/novolak photoresist system TNS. ESX was able to print at approximately half the dose needed for TNS. Features as small as 175 nm resolved. These set of experiments demonstrate the potential of significantly improving the photospeed of DQ/novolak photoresist system by utilizing a more x-ray efficient PAC.

Paper Details

Date Published: 9 June 1995
PDF: 10 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210395
Show Author Affiliations
Daniel Bucca, IBM Thomas J. Watson Research Ctr. (United States)
Ari Aviram, IBM Thomas J. Watson Research Ctr. (United States)
David E. Seeger, IBM Thomas J. Watson Research Ctr. (United States)
Will Conley, IBM Corp. (United States)
William R. Brunsvold, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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