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Proceedings Paper

Effect of reducing the contaminant concentration when patterning a chemically amplified positive resist
Author(s): Akira Oikawa; Yasunori Hatakenaka; Yumiko Ikeda; Yoko Kokubo; Motoko Tanishima; Nobuaki Santoh; Naomichi Abe
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Paper Abstract

We considered that contaminant control could best be addressed from the processing side. A KrF excimer stepper and a track system were physically integrated and equipped with chemical filter units. The atmosphere where wafers were transported from exposure to postexposure bake (PEB) was enclosed. The measured ammonia concentration was always less than 0.5 (mu) g/m3 everywhere within the enclosed atmosphere. We patterned resists with an ammonia concentration of 0.2 (mu) g/m3. They showed no T-tops and the deviation rates of line width against PEB were within the range of 0.56 to 0.80 nm/min for line and space patterns between 0.30 to 0.35 micrometers . These low deviation rates were considered to be acceptable for manufacturing purposes.

Paper Details

Date Published: 9 June 1995
PDF: 10 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210383
Show Author Affiliations
Akira Oikawa, Fujitsu Ltd. (Japan)
Yasunori Hatakenaka, Fujitsu VLSI Ltd. (Japan)
Yumiko Ikeda, Fujitsu Ltd. (Japan)
Yoko Kokubo, Fujitsu Ltd. (Japan)
Motoko Tanishima, Fujitsu Ltd. (Japan)
Nobuaki Santoh, Fujitsu Ltd. (Japan)
Naomichi Abe, Fujitsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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