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Proceedings Paper

Use of wafer curvature measurement (WCM) techniques in the determination of the process window of positive DUV resists
Author(s): Patrick Jean Paniez; Andre Schiltz
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Paper Abstract

The glass transition temperature (Tg) is related to the two main concerns encountered with chemically amplified resists, namely delay-time and contamination effects. However, Tg is often convoluted with the deprotection reaction and cannot be determined using conventional thermal analysis techniques (e.g., DSC). This problem can nevertheless be circumvented using the wafer curvature measurement technique (WCM). Thus, DSC and WCM appear to be complementary techniques for the complete thermal characterization of DUV resists. Each technique provides one of the two temperature boundaries of an optimum process window. Various DUV positive resists, representative of different cases, are investigated.

Paper Details

Date Published: 9 June 1995
PDF: 9 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210366
Show Author Affiliations
Patrick Jean Paniez, France Telecom CNET Grenoble (France)
Andre Schiltz, France Telecom CNET Grenoble (France)


Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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