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Proceedings Paper

Effect of dissolution inhibitors on the dissolution characteristics of chemically amplified positive-tone electron beam resist
Author(s): Hideo Horibe; Teruhiko Kumada; Shigeru Kubota; Yoshika Kimura
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Paper Abstract

The chemical amplification resist system composed of partially tBOC-protected PVP, a dissolution inhibitor, and an acid generator are investigated as EB resists. As dissolution inhibitors, hydroquinone protected with tert-butoxycarbonyl group (B-HQ) and isophthalic acid protected with tert-butyl group (B-IP) are utilized. It is found that dissolution rate of the resist consisting of B-IP is faster than that of B-HQ in the exposed area. B-HQ and B-IP as dissolution inhibitors convert into HQ and IP as dissolution promoters after exposure, respectively. The pKa of IP is smaller than that of HQ. It is considered that the acidity of IP is higher than that of HQ, so the ability of the dissolution promotion of IP is much larger than that of HQ. IP enhances the solubility of the matrix resin to the alkaline developer larger than HQ. The resist consisting of B-IP has a high dissolution rate ratio between the exposed and unexposed areas, so it is considered that it results in a much improved patten profile. A 0.14 micrometers lines-and-spaces pattern is successfully fabricated at 17.5 (mu) C/cm2 using 50 keV. EB.

Paper Details

Date Published: 9 June 1995
PDF: 12 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210362
Show Author Affiliations
Hideo Horibe, Mitsubishi Electric Corp. (Japan)
Teruhiko Kumada, Mitsubishi Electric Corp. (Japan)
Shigeru Kubota, Mitsubishi Electric Corp. (Japan)
Yoshika Kimura, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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