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Proceedings Paper

Optimization of a 193-nm silylation process for sub-0.25-um lithography
Author(s): Susan C. Palmateer; Roderick R. Kunz; Mark W. Horn; Anthony R. Forte; Mordechai Rothschild
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Paper Abstract

We have optimized a positive-tone silylation process using polyvinylphenol resist and dimethylsilyldimethylamine as the silylating agent. Imaging quality and process latitude have been evaluated at 193 nm using a 0.5-NA SVGL prototype exposure system. A low- temperature dry etch process was developed that produces vertical resist profiles resulting in large exposure and defocus latitudes, linearity of gratings down to 0.175 micrometers , and resolution of 0.15-micrometers gratings and isolated lines.

Paper Details

Date Published: 9 June 1995
PDF: 10 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210356
Show Author Affiliations
Susan C. Palmateer, MIT Lincoln Lab. (United States)
Roderick R. Kunz, MIT Lincoln Lab. (United States)
Mark W. Horn, MIT Lincoln Lab. (United States)
Anthony R. Forte, MIT Lincoln Lab. (United States)
Mordechai Rothschild, MIT Lincoln Lab. (United States)

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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