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Proceedings Paper

Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer
Author(s): Kaichiro Nakano; Katsumi Maeda; Shigeyuki Iwasa; Takeshi Ohfuji; Etsuo Hasegawa
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Paper Abstract

A new positive chemically amplified resist which consists of a novel photoacid generator NEALS (new alkylsulfonium salt) and methacrylate terpolymer with tricyclodecanyl group (TCDA) has been developed. NEALS shows good thermal stability up to 151 degree(s)C, high transparency and high acid generation efficiency for an ArF excimer laser exposure. A new base polymer with TCDA groups demonstrated high transparency (69.3%/micrometers ), high thermal stability up to 141 degree(s)C, a good dry-etching resistance and high solubility for an aqueous base (tetramethylammonium hydroxide) developer. A 0.20 micrometers lines and spaces pattern has been resolved using an ArF excimer laser exposure system (NA equals 0.55).

Paper Details

Date Published: 9 June 1995
PDF: 12 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210354
Show Author Affiliations
Kaichiro Nakano, NEC Corp. (Japan)
Katsumi Maeda, NEC Corp. (Japan)
Shigeyuki Iwasa, NEC Corp. (Japan)
Takeshi Ohfuji, NEC Corp. (Japan)
Etsuo Hasegawa, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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