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Proceedings Paper

Patterning of high Tc superconducting thin films on Si substrates
Author(s): Qiyuan Y. Ma; Chester Shu; Edward S. Yang; Chin-An Chang; C. E. Farrell
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Paper Abstract

Interdiffusion and reaction at the interface between an YBaCuO film and a Si substrate degrade the superconductivity of the film. Using a buffer layer, the film-substrate interaction can be reduced. Thus, a superconducting thin film is formed on a silicon substrate. A new method of patterning superconducting thin films based on the Si-YBaCuO intermixing has been developed. On a silicon substrate, a thin layer of noble metal was first evaporated and patterned using photolithography. An YBaCuO film was then deposited by e-beam evaporation and annealed in a rapid thermal processing system. After a high temperature annealing, the patterned feature became superconducting separated by Si-YBaCuO intermixed areas. Superconducting micron-sized the structures with Tc of 73 K have been demonstrated. This patterning technique may be useful for making high-Tc superconducting interconnects and devices on a Si wafer.

Paper Details

Date Published: 1 October 1990
PDF: 6 pages
Proc. SPIE 1292, Superconductivity Applications for Infrared and Microwave Devices, (1 October 1990); doi: 10.1117/12.21027
Show Author Affiliations
Qiyuan Y. Ma, Columbia Univ. (United States)
Chester Shu, Columbia Univ. (Hong Kong)
Edward S. Yang, Columbia Univ. (United States)
Chin-An Chang, IBM/Thomas J. Watson Research (Taiwan)
C. E. Farrell, IBM/Thomas J. Watson Research (United States)

Published in SPIE Proceedings Vol. 1292:
Superconductivity Applications for Infrared and Microwave Devices
Kul B. Bhasin; Vernon O. Heinen, Editor(s)

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