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Proceedings Paper

Properties of IR photocathodes on InGaAs/InP heterostructures with Schottky barrier intended for streak tubes
Author(s): A. S. Chernikov; S. G. Chernook; Eduard L. Nolle; Alexander M. Prokhorov; Mikhail Ya. Schelev; E. G. Sokol
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Paper Abstract

The properties of IR photocathodes intended for streak tubes as well as InGaAs/InP heterostructures were investigated. It has been shown that optical transmittance, photoluminicence, photovoltaic and C-V measurements made possible to control the heterostructure composition with the precision better than 1% and to determine its type of conductivity and carriers concentration. Since these techniques are nondestructive ones and they do not require any electric contacts deposited onto the structure they could be used for controlling of the grown heterostructures. The properties of InGaAs/InP heterostructures with Schottky barriers were studied by scanning electron microscope (SEM) working in electron beam induced current (EBIC) mode. It has been shown that for the investigated photocathodes the photoemission current value strongly depends on the applied anode voltage, and therefore at high electric field 104 V/cm the photoemission quantum efficiency is substantially increased. Preliminary study of the photoemission current stability were carried out for a sealed volume serving as a model of a streak tube.

Paper Details

Date Published: 30 May 1995
PDF: 6 pages
Proc. SPIE 2513, 21st International Congress on: High-Speed Photography and Photonics, (30 May 1995); doi: 10.1117/12.209550
Show Author Affiliations
A. S. Chernikov, General Physics Institute (Russia)
S. G. Chernook, General Physics Institute (Russia)
Eduard L. Nolle, General Physics Institute (Russia)
Alexander M. Prokhorov, General Physics Institute (Russia)
Mikhail Ya. Schelev, General Physics Institute (Russia)
E. G. Sokol, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 2513:
21st International Congress on: High-Speed Photography and Photonics
Ung Kim; Joon-Sung Chang; Seung-Han Park, Editor(s)

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