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Proceedings Paper

Process capabilities of critical dimensions at gate mask
Author(s): Zoran Krivokapic; William D. Heavlin; David F. Kyser
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Paper Abstract

We present a methodology for predicting photoresist linewidth distributions, and for quantifying the contributions of the key sources of variation. We apply it to evaluate the manufacturability of photolithographic processes under development. The methodology has the advantage of predicting distributions across the entire reticle field. When technology requirements are too stringent, this approach quantifies which elements of the process need to be more tightly controlled. We apply these methods to a 0.5 micron technology and to two 0.35 micron technologies; the latter requires a novel calibration strategy. For production i-line lithography of 0.35 micron features, our results predict that improved exposure dose control is needed.

Paper Details

Date Published: 26 May 1995
PDF: 12 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209320
Show Author Affiliations
Zoran Krivokapic, Advanced Micro Devices, Inc. (United States)
William D. Heavlin, Advanced Micro Devices, Inc. (United States)
David F. Kyser, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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