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Proceedings Paper

Feasibility study of argon fluoride excimer laser for microlithography
Author(s): Hiroshi Komori; Hidetomi Ochi; Osamu Wakabayashi; Hakaru Mizoguchi
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Paper Abstract

A feasibility study of ArF excimer laser as a light source for subquarter micron design rule lithography is presented. Partially narrowed KLES-G1A ArF laser produces 57-pm (FWHM) bandwidth pulses with an average power of 5.1 W. Narrow-band operated KLES-G1A generated 7.2- pm (FWHM) pulses with 1.4 W. Further high output power with narrow-band spectrum was achieved by using injection-locking technique. The injection-locked ArF laser system generated 0.8-pm (FWHM) bandwidth pulses with an average power of 250 W. We also point out some problems appeared in the laser operation.

Paper Details

Date Published: 26 May 1995
PDF: 12 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209315
Show Author Affiliations
Hiroshi Komori, Komatsu Ltd. (Japan)
Hidetomi Ochi, Komatsu Ltd. (Japan)
Osamu Wakabayashi, Komatsu Ltd. (Japan)
Hakaru Mizoguchi, Komatsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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