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Proceedings Paper

Optical lithography technique with dummy diffraction mask for 0.20 um T-shaped gate formation
Author(s): Byung-Sun Park; Yong-Ho Oh; Sang-Soo Choi; Hai Bin Chung; Hyung Joun Yoo
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Paper Abstract

An optical lithography technique for the formation of T-shaped gate metal with narrow (sub 0.25 micrometers ) channel length, was studied. A special photomask known as the dummy diffraction mask was used to form a T-shaped resist profile by single exposure and development process steps. The sub 0.25 micrometers T-shaped gate metal could be easily obtained with i-line stepper (N.A. 0.4) under ordinary lithographic process conditions and the process margins were found to be enough for the application of device fabrication.

Paper Details

Date Published: 26 May 1995
PDF: 8 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209310
Show Author Affiliations
Byung-Sun Park, Electronics & Telecommunications Research Institute (South Korea)
Yong-Ho Oh, Electronics & Telecommunications Research Institute (South Korea)
Sang-Soo Choi, Electronics & Telecommunications Research Institute (South Korea)
Hai Bin Chung, Electronics & Telecommunications Research Institute (South Korea)
Hyung Joun Yoo, Electronics & Telecommunications Research Institute (South Korea)


Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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