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Proceedings Paper

New interferometric phase-shifting technique for sub-half-micron laser microlithography
Author(s): Miklos Erdelyi; Chaitali Sengupta; Zsolt Bor; Joseph R. Cavallaro; Motoi Kido; Michael C. Smayling; Frank K. Tittel; William L. Wilson; Gabor Szabo
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Paper Abstract

This paper reports recent progress in achieving subhalf-micron feature sizes with UV laser illumination based on a novel interferometric phase shifting (IPS) technique. In the IPS arrangement, the intensity and amount of phase shift of the shifted beam can be controlled continuously and independently using the same mask. Consequently the method can be considered as a convenient general testbed for practical phase shifting concepts such as strong, weak and attenuated phase shifting. Recent measurements of the lithographic performance of a new concept are reported where phase shifting is combined with off-axis illumination. Experimental as well as simulation data are used to demonstrate this new method. A lithography simulator, Depict from Technology Modeling Associates, Inc. and a related Integrated CAD Framework which is being developed at Rice University was used to simulate and evaluate the performance of the IPS scheme.

Paper Details

Date Published: 26 May 1995
PDF: 11 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209308
Show Author Affiliations
Miklos Erdelyi, Jate Univ. (Hungary)
Chaitali Sengupta, Rice Univ. (United States)
Zsolt Bor, Jate Univ. (Hungary)
Joseph R. Cavallaro, Rice Univ. (United States)
Motoi Kido, Rice Univ. (United States)
Michael C. Smayling, Rice Univ. (United States)
Frank K. Tittel, Rice Univ. (United States)
William L. Wilson, Rice Univ. (United States)
Gabor Szabo, Jate Univ. (Hungary)


Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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