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Proceedings Paper

Sub-half-micron i-line photolithography process using AZ BARLi
Author(s): Jeffrey R. Johnson; Todd H. Gandy; Gregory J. Stagaman; Ronald J. Eakin; John C. Sardella; Charles R. Spinner; Fu-Tai Liou; Mark A. Spak
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Paper Abstract

A process using a bottom-side antireflective coating, AZ BARLi, has been studied for 0.50 micrometers and sub-0.5 micrometers features using I-line photolithography. Significant improvements were demonstrated for such process parameters as CD swing curve ratio, exposure latitude, and reflective notching of the photoresist. Extensive characterization was done on defects observed between the BARLi and photoresist coatings, and a process developed for their elimination. Factors which had significant effects on the observed number of defects, and their distribution, were the type of photoresist coat program used, solvent treatment of the BARLi surface, and a high temperature bake after photoresist coat. Data is presented for a complete process, which includes plasma etching the BARLi antireflective coating.

Paper Details

Date Published: 26 May 1995
PDF: 20 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209287
Show Author Affiliations
Jeffrey R. Johnson, SGS-Thomson Microelectronics, Inc. (United States)
Todd H. Gandy, SGS-Thomson Microelectronics, Inc. (United States)
Gregory J. Stagaman, SGS-Thomson Microelectronics, Inc. (United States)
Ronald J. Eakin, SGS-Thomson Microelectronics, Inc. (United States)
John C. Sardella, SGS-Thomson Microelectronics, Inc. (United States)
Charles R. Spinner, SGS-Thomson Microelectronics, Inc. (United States)
Fu-Tai Liou, SGS-Thomson Microelectronics, Inc. (United States)
Mark A. Spak, Hoechst Celanese Corp. (United States)

Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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