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Proceedings Paper

Focus shift and process latitude of contact holes on attenuated phase-shifting masks
Author(s): Alfred K. K. Wong; Richard A. Ferguson; Ronald M. Martino; Andrew R. Neureuther
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Paper Abstract

Focus shift and process latitude of contact features on both dark-field and light-field attenuated phase-shifting masks and binary intensity masks were examined using experimentally measured aerial images from the Ziess MSM-100 with IBM AIMS software, the scalar and thin-mask approximation in SPLAT, and the rigorous electromagnetic simulator TEMPEST. The dark-field attenuated phase-shifting mask (aPSM) contact holes show the most severe amount of focus shift, although the shift is not much different from that of space openings. Exposure latitude of dark field aPSM features shows a 12% improvement (from 33% to 45%) over conventional binary intensity mask. Depth-of-focus is also improved. under biasing of the mask features can also improve the process latitude of dark-field masks, whereas the contrary is true for light-field mask features. In general, the process latitude of light-field contact features is worse than that of dark-field features, indicating the need for positive deep-UV photoresist technology.

Paper Details

Date Published: 26 May 1995
PDF: 8 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209278
Show Author Affiliations
Alfred K. K. Wong, Univ. of California/Berkeley (Hong Kong)
Richard A. Ferguson, IBM Microelectronics (United States)
Ronald M. Martino, IBM Microelectronics (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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