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Proceedings Paper

Focus effects in submicron optical lithography, part 4: metrics for depth of focus
Author(s): Chris A. Mack
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Paper Abstract

Common uses of the term 'depth of focus' (DOF) are explored as it relates to semiconductor lithography. A definition of DOF is given which is most appropriate to photolithography for IC manufacturing and this definition is compared to other DOF metrics. In particular, simple methods for determining DOF (either experimentally or through simulation) lead to DOF-like metrics. These metrics are compared to the definition of DOF and their accuracy are evaluated. Examples of the use of the definition for DOF for studying trends in lithography are given.

Paper Details

Date Published: 26 May 1995
PDF: 14 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209276
Show Author Affiliations
Chris A. Mack, FINLE Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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