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Proceedings Paper

Practical use of simulation for advanced lithography techniques
Author(s): Leonhard Mader; Norbert Lehner
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Paper Abstract

Advanced lithography techniques for the sub-half-micron range need a 'balanced' set of parameters to get the necessary enhanced resolution and process latitudes. The influence of every parameter ((lambda) , NA, (sigma) , mask type, illumination geometry) has been studied by extensive use of simulation techniques. The results are visualized in a comparison matrix. So trends can be observed and using this matrix it will be possible to decide whether or not one can use extremely high NA values in order to get high resolution and which additional methods will be necessary for compensation of the reduced focus latitude by NA increase.

Paper Details

Date Published: 26 May 1995
PDF: 12 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209272
Show Author Affiliations
Leonhard Mader, Siemens AG (Germany)
Norbert Lehner, Siemens AG (Germany)


Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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