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Proceedings Paper

Quantifying proximity and related effects in advanced wafer processes
Author(s): John P. Stirniman; Michael L. Rieger; Robert E. Gleason
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Paper Abstract

Proximity effect correction presumes that a significant proportion of CD variations observed in wafer lithography and processes can be systematically predicted from calculations made on a pattern layout prior to fabrication. Total shape variations include a portion that repeats from chip-to-chip and wafer-to-wafer, and a randomly varying portion. Repeating effects can be compensated by modifying feature shapes on the mask pattern. The project described in this report is a study to characterize the systematic shape distortions in an experimental 0.25 micrometers process. Analyses of variation are made to quantify dependencies on specific variation sources. Two-dimensional 'behavior models,' derived from characterization data measured from processed wafers, can be used to compute shape corrections for arbitrary pattern layouts. This project was undertaken in collaboration with the Hewlett Packard Research Laboratories, Palo Alto, CA.

Paper Details

Date Published: 26 May 1995
PDF: 9 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209257
Show Author Affiliations
John P. Stirniman, Precim Co. (United States)
Michael L. Rieger, Precim Co. (United States)
Robert E. Gleason, Hewlett-Packard Labs. (United States)


Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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