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Proceedings Paper

Automatic optical proximity correction with optimization of stepper condition
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Paper Abstract

A simulated annealing, one of the optimization algorithms, has been applied to the optical proximity correction. Using attenuating phase shifting mask with annular illumination, the stepper condition as well as mask design has been optimized to correct line shortening for typical cell array pattern of dynamic random access memory. A cost function has been designed to reflect the desired dose-window and depth of focus obtained by ED-tree analysis. The performances of escape from a local minimum and the convergency have been demonstrated. Then all parameters that dominated the optical proximity effect have been optimized to minimize the cost function under practical constraints.

Paper Details

Date Published: 26 May 1995
PDF: 12 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209255
Show Author Affiliations
Soichi Inoue, Toshiba Corp. (Japan)
Tadahito Fujisawa, Toshiba Corp. (Japan)
Satoshi Tanaka, Toshiba Corp. (Japan)
Shoji Mimotogi, Toshiba Corp. (Japan)
Akiko Nikki, Toshiba Corp. (Japan)
Ichiro Mori, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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