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Proceedings Paper

Scaling issues for ultra-high-speed HEMTs
Author(s): Loi D. Nguyen; Paul J. Tasker
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Paper Abstract

This paper describes the scaling of High-Electron Mobility Transistors (HEMTs) for ultra-high-speed operations. We predict that, with proper device scaling, an extrinsic switching speed in excess of 300 GHz will be achieved in the near future for state-of-the-art HEMTs.

Paper Details

Date Published: 1 August 1990
PDF: 7 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20925
Show Author Affiliations
Loi D. Nguyen, Hughes Research Labs. (United States)
Paul J. Tasker, Cornell Univ. (Germany)


Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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