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Proceedings Paper

193-nm full-field step-and-scan prototype at MIT Lincoln Laboratory
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Paper Abstract

Optical lithography at a 193-nm exposure wavelength has been under development at MIT Lincoln Laboratory for several years, supported by ARPA's Advanced Lithography Program. As part of this program, a prototype 193-nm full-field step-and-scan lithographic exposure system was built and installed in the clean-room facilities of MIT Lincoln Laboratory. This exposure system has now been in use for one year, supporting a program of photoresist and lithographic process development at 193 nm. This paper describes the characteristics of the exposure system and some of the advances in 193-nm lithography that have been achieved with the system.

Paper Details

Date Published: 26 May 1995
PDF: 9 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209242
Show Author Affiliations
Michael S. Hibbs, MIT Lincoln Lab. (United States)
Roderick R. Kunz, MIT Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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