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Proceedings Paper

Scaling of MESFETs and HEMTs at 0.1-um gate length
Author(s): Niru V. Dandekar; Douglas Jon Burrows; Joseph W. Manning
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Paper Abstract

A novel adaption of the mushroom gate structure has been realized and exhibited in MESFET as well as HEMT devices. The gate structure has a serrated appearance, and it realizes low input capacitance, in addition to the low resistance achievable using a conventional approach. At gate lengths below 0.15 micron, the device structure assumes a qualitatively different form, requiring a reassessment of the scaling rules. Initial results on working devices are presented.

Paper Details

Date Published: 1 August 1990
PDF: 8 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20924
Show Author Affiliations
Niru V. Dandekar, Sanders Associates, Inc. (United States)
Douglas Jon Burrows, Sanders Associates, Inc. (United States)
Joseph W. Manning, Sanders Associates, Inc. (United States)


Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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