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Proceedings Paper

Scaling of MESFETs and HEMTs at 0.1-um gate length
Author(s): Niru V. Dandekar; Douglas Jon Burrows; Joseph W. Manning
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Paper Details

Date Published: 1 August 1990
PDF: 8 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20924
Show Author Affiliations
Niru V. Dandekar, Sanders Associates, Inc. (United States)
Douglas Jon Burrows, Sanders Associates, Inc. (United States)
Joseph W. Manning, Sanders Associates, Inc. (United States)


Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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