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Proceedings Paper

Near and sub-half-micrometer geometry SEM metrology requirements for good process control
Author(s): Christopher M. Cork; Paolo Canestrari; Paolo De Natale; Mauro Vasconi
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Paper Abstract

Over the past ten years lpw kV Electron Microscopy has been the technique of choice for inprocess, critical layer metrology, for leading-edge design-rule devices. However, conventional low kY Secondary Electron microscopy is reaching its limits in its ability to measure near and sub-half micron features at all levels due to charging issues and interpretation of resist profile. A re-evaluation of the strategy for determining CD measurement site becomes increasingly important as site to site differences are more significant at these smaller dimensions. Otherwise an apparently well controlled process measured in a typical site (e.g. array of a memoiy cell) could be failing due to shorts in critical sites. These critical sites tend to challenge the limits of conventional SEM metrology more. A new generation of SEMs offering a variety of techniques to overcome these limitations has recently arrived on the market, these improve visibility and reduce the effects of charging, allowing a more accurate and representative control ofa lithographic process to be made.

Paper Details

Date Published: 22 May 1995
PDF: 8 pages
Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); doi: 10.1117/12.209238
Show Author Affiliations
Christopher M. Cork, SGS-Thomson Microelectronics (Italy)
Paolo Canestrari, SGS-Thomson Microelectronics (Italy)
Paolo De Natale, SGS-Thomson Microelectronics (Italy)
Mauro Vasconi, SGS-Thomson Microelectronics (Italy)

Published in SPIE Proceedings Vol. 2439:
Integrated Circuit Metrology, Inspection, and Process Control IX
Marylyn Hoy Bennett, Editor(s)

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