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Proceedings Paper

Very low-noise Al0.3Ga0.7As/In0.35Ga0.65As/GaAs single quantum-well pseudomorphic HEMTs
Author(s): P. C. Chao; Pin Ho; K. H.G. Duh; P. M. Smith; J. M. Ballingall; Amani A. Jabra; N. Lewis; E. L. Hall
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Paper Abstract

AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700mS/mm. At 18GHz, a minimum noise figure of 0.55dB with 15.0dB associated gain was measured. At 94GHz, a minimum noise figure as low as 2.4dB with 5.4dB associated gain was also obtained. This is the best noise performance ever reported for GaAs-based HEMTs.

Paper Details

Date Published: 1 August 1990
PDF: 5 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20923
Show Author Affiliations
P. C. Chao, General Electric Co. (United States)
Pin Ho, General Electric Co. (United States)
K. H.G. Duh, General Electric Co. (United States)
P. M. Smith, General Electric Co. (United States)
J. M. Ballingall, General Electric Co. (United States)
Amani A. Jabra, General Electric Co. (United States)
N. Lewis, General Electric Co. (United States)
E. L. Hall, General Electric Co. (United States)


Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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