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Proceedings Paper

Very low-noise Al0.3Ga0.7As/In0.35Ga0.65As/GaAs single quantum-well pseudomorphic HEMTs
Author(s): P. C. Chao; Pin Ho; K. H.G. Duh; P. M. Smith; J. M. Ballingall; Amani A. Jabra; N. Lewis; E. L. Hall
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Paper Details

Date Published: 1 August 1990
PDF: 5 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20923
Show Author Affiliations
P. C. Chao, General Electric Co. (United States)
Pin Ho, General Electric Co. (United States)
K. H.G. Duh, General Electric Co. (United States)
P. M. Smith, General Electric Co. (United States)
J. M. Ballingall, General Electric Co. (United States)
Amani A. Jabra, General Electric Co. (United States)
N. Lewis, General Electric Co. (United States)
E. L. Hall, General Electric Co. (United States)


Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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