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Proceedings Paper

CD control using latent image for lithography
Author(s): Taichi Koizumi; Takahiro Matsuo; Masayuki Endo; Masaru Sasago
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Paper Abstract

As a design rule of LSI device gets smaller, critical dimension (CD) control becomes increasingly difficult. This creates a new technology to CD control accurately. The technology utilizes intensity of light diffracted from latent image consisting of periodic patterns in undeveloped photoresist, and its possibility has been reported for several years. We have developed a new method of the CD control by monitoring profile of the latent image using atomic force microscope (AFM). The reduction of CD variation using this method is achieved by controlling development time from the relationship between the profile of the latent image and CD after development. We have tried to apply this method to a resist process in KrF excimer laser lithography and found usefulness of the method for 0.25 micrometers lithography.

Paper Details

Date Published: 22 May 1995
PDF: 9 pages
Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); doi: 10.1117/12.209226
Show Author Affiliations
Taichi Koizumi, Matsushita Electric Industrial Co., Ltd. (Japan)
Takahiro Matsuo, Matsushita Electric Industrial Co., Ltd. (Japan)
Masayuki Endo, Matsushita Electric Industrial Co., Ltd. (Japan)
Masaru Sasago, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2439:
Integrated Circuit Metrology, Inspection, and Process Control IX
Marylyn Hoy Bennett, Editor(s)

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