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Proceedings Paper

Development of an end-point detection procedure for the post-expose bake process
Author(s): Michael L. Miller; Duncan A. Mellichamp
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Paper Abstract

Iii previous work by Sturtevant et al [1994] it was shown how the use of scatterometry data obtained in real time during the post-expose bake (PEB) step of the photolithography process can improve critical dimension (CD) control. However, it is not obvious that the ad hoc methodology utilized during these experiments conducted at IBM, is the best way to use this valuable information. This paper focuses on the development of more rigorous methods that can incorporate scatterometry data in on-line prediction of the bake time necessary to achieve the target CD. First, a brief description of the system and required tools is given. Then, a model that can relate the measured intensity and the time the wafer has been baked (referred to hereafter as the bake time) is introduced. Then, two theoretical methods that can utilize this model to calculate the bake end point are described. Finally, these two methods are applied to the analysis ofadditional data collected at IBM and operation oftbe complete end point control system is emulated to the extent that is possible. Keywords: end-point detection, process control, deep-UV lithography, scatterometry, post-exposure bake process

Paper Details

Date Published: 22 May 1995
PDF: 11 pages
Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); doi: 10.1117/12.209225
Show Author Affiliations
Michael L. Miller, Univ. of California/Santa Barbara (United States)
Duncan A. Mellichamp, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 2439:
Integrated Circuit Metrology, Inspection, and Process Control IX
Marylyn Hoy Bennett, Editor(s)

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