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Proceedings Paper

Progress on accurate metrology of pitch, height, roughness, and width artifacts using an atomic force microscope
Author(s): Jason Schneir; Thomas H. McWaid; Ronald G. Dixson; Vincent Wen-Chieh Tsai; John S. Villarrubia; Ellen D. Williams; E. Fu
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Paper Abstract

NIST personnel (J.S. and T.M.) visited 23 IC manufacturing companies and equipment suppliers during 1994 to determine semiconductor industry needs for scanned probe metrology. NIST has initiated projects addressing some of the need identified. When complete these projects will enable improved metrology using the scanned probe microscope. Industry needs include pitch, height, angle, and width calibration artifacts, and understanding of the effect of humidity on AFM measurements, and tip metrology techniques. To meet these needs we have designed and built a Calibrated Atomic Force Microscope (C-AFM) with interferometric position control. This AFM is capable of making accurate measurements. We present the operational characteristics of the instrument, accurate X, Y, and Z pitch measurements on a commercially available artifact, measurements on a prototype surface roughness artifact, and a promising technique by which to make accurate linewidth measurements.

Paper Details

Date Published: 22 May 1995
PDF: 15 pages
Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); doi: 10.1117/12.209224
Show Author Affiliations
Jason Schneir, National Institute of Standards and Technology (United States)
Thomas H. McWaid, National Institute of Standards and Technology (United States)
Ronald G. Dixson, National Institute of Standards and Technology (United States)
Vincent Wen-Chieh Tsai, Univ. of Maryland/College Park (United States)
John S. Villarrubia, National Institute of Standards and Technology (United States)
Ellen D. Williams, Univ. of Maryland/College Park (United States)
E. Fu, Univ. of Maryland/College Park (United States)


Published in SPIE Proceedings Vol. 2439:
Integrated Circuit Metrology, Inspection, and Process Control IX
Marylyn Hoy Bennett, Editor(s)

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