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Proceedings Paper

Characterization of chemical-mechanical polished overlay targets using coherence probe microscopy
Author(s): Bert F. Plambeck; Noam Knoll; Patrick J. Lord
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Paper Abstract

Chemical-Mechanical Polishing processes are helping chip makers solve problems with multilevel metals, smaller device features and narrower stepper lens depth of focus, but are creating new challenges for other segments of the semiconductor industry. In particular, planarized metrology targets can cause overlay measurements to be inaccurate as well as imprecise. Coherence Probe Microscopy (CPM), when applied to overlay metrology, provides a solution for registration measurements on chemical-mechanical polished wafers. This paper describes the use of CPM measurements technology to characterize chemical-mechanical polishing wafer processes. The presented results show a comparison of misregistration measurements from planarized wafers before and after etch and discusses the impact on registration by chemical-mechanical polishing.

Paper Details

Date Published: 22 May 1995
PDF: 11 pages
Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); doi: 10.1117/12.209213
Show Author Affiliations
Bert F. Plambeck, KLA Instruments Corp. (United States)
Noam Knoll, KLA Instruments Corp. (United States)
Patrick J. Lord, KLA Instruments Corp. (United States)


Published in SPIE Proceedings Vol. 2439:
Integrated Circuit Metrology, Inspection, and Process Control IX
Marylyn Hoy Bennett, Editor(s)

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