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Proceedings Paper

Optimization of modulation doped FET structures
Author(s): Paul J. Tasker; Mark C. Foisy; Loi D. Nguyen
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Paper Abstract

The Modulation Doped Transistor (MODFET) has recently achieved its predicted performance goals, thus demonstrating its potential for providing the semiconductor transistor component necessary for future high speed and millimeter wave integrated systems. This high performance has been achieved through i) the optimization of MBE growth of pseudomorphic heterojunctions, ii) modifications to the epitaxial layer design based on new physical insight into the operation of MODFET structures at high frequency and iii) improvements in the FET fabrication and “layout” structure (geometry) to minimize resistive and reactive parasitic impedances.

Paper Details

Date Published: 1 August 1990
PDF: 15 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20921
Show Author Affiliations
Paul J. Tasker, Cornell Univ. (Germany)
Mark C. Foisy, Cornell Univ. (United States)
Loi D. Nguyen, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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