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Proceedings Paper

Overlay measurements and standards
Author(s): Richard M. Silver; James E. Potzick; Robert D. Larrabee
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Paper Abstract

The relative misalignment of features produced by different mask levels (i.e., overlay error) is projected to become an increasingly important problem to the semiconductor industry as the size of critical features continues to decrease. In response to this need, NIST has initiated a two-step program to improve the measurement of overlay error, and to develop standards in support of overlay metrology. The approach of the first step is to develop a 'toolkit' of standards for characterizing the tool-induced shifts (TIS) in the optical tools presently used for the measurement of overlay error, with the aim of producing and maintaining overlay tools with negligible TIS. The second step, which necessarily follows the successful completion of the first step, is aimed at developing artifact standards with negligible wafer-induced shifts for the calibration of the TIS-free overlay tools.

Paper Details

Date Published: 22 May 1995
PDF: 11 pages
Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); doi: 10.1117/12.209209
Show Author Affiliations
Richard M. Silver, National Institute of Standards and Technology (United States)
James E. Potzick, National Institute of Standards and Technology (United States)
Robert D. Larrabee, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 2439:
Integrated Circuit Metrology, Inspection, and Process Control IX
Marylyn Hoy Bennett, Editor(s)

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