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Proceedings Paper

Printability and repair of defects in rim and attenuated phase shift masks
Author(s): Philip D. Prewett; Zheng Cui; John G. Watson; Brian Martin
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Paper Abstract

Rim and attenuated phase shift masks can extend the range of i-line optical stepper lithography to 0.4 micrometers with enhanced depth of field. The repair of defects through subtractive and additive methods using focused ion beams is critical to the future success of the technology. Printability tests and simulation studies demonstrate the hierarchy of defects in which both rPSM and aPSM types are less tolerant of absorbing/attenuating defects, but more tolerant of clear defects than the corresponding conventional BIM. Repair trials reveal the existence of a new type of post repair defect - the phase trench - but also clearly demonstrate the feasibility of repair using FIB methods.

Paper Details

Date Published: 22 May 1995
PDF: 10 pages
Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); doi: 10.1117/12.209204
Show Author Affiliations
Philip D. Prewett, Rutherford Appleton Lab. (United Kingdom)
Zheng Cui, Rutherford Appleton Lab. (United Kingdom)
John G. Watson, Rutherford Appleton Lab. (United Kingdom)
Brian Martin, GEC Plessey Semiconductors Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 2439:
Integrated Circuit Metrology, Inspection, and Process Control IX
Marylyn Hoy Bennett, Editor(s)

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