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Proceedings Paper

Current-voltage characteristics of MBE-grown strained Si1-xGex/Si heterojunction diodes and their temperature dependence
Author(s): Dan-Xia Xu; Guangdi Shen; Magnus Willander; Goeran Hansson
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Paper Details

Date Published: 1 August 1990
PDF: 11 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20920
Show Author Affiliations
Dan-Xia Xu, Linkoping Univ. (Canada)
Guangdi Shen, Linkoping Univ. (China)
Magnus Willander, Linkoping Univ. (Sweden)
Goeran Hansson, Linkoping Univ. (Sweden)


Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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