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Proceedings Paper

Current-voltage characteristics of MBE-grown strained Si1-xGex/Si heterojunction diodes and their temperature dependence
Author(s): Dan-Xia Xu; Guangdi Shen; Magnus Willander; Goeran Hansson
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Paper Abstract

Studies of current-voltage (I-V) characteristics and their temperature dependence show that the current transport in MBE-grown Si1-xGex/Si diodes is closely related to the epitaxial film quality. It is mainly controlled by two different mechanisms at low and high temperature. The ideality factor n of the diodes increases as the temperature is reduced, and n increases faster for the diodes which have larger n at room temperature. From comparisons with calculated results, it is proposed that the transport mechanism is diffusion controlled at high temperature and defect-assisted tunneling controlled at low temperature. The results from ? irradiation studies also support this suggestion. Due to the existence of band-offsets, the shift of the I-V curve with temperature of p+-Si1-xGex/n-Si diodes is much smaller than that in n+-Si1-xGex/p-Si diodes, when the current is diffusion controlled. The band-offsets are estimated from these shifts, and the results are in agreement with values measured by another method.

Paper Details

Date Published: 1 August 1990
PDF: 11 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20920
Show Author Affiliations
Dan-Xia Xu, Linkoping Univ. (Canada)
Guangdi Shen, Linkoping Univ. (China)
Magnus Willander, Linkoping Univ. (Sweden)
Goeran Hansson, Linkoping Univ. (Sweden)

Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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