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Proceedings Paper

SEM review of unpatterned particle monitor wafers
Author(s): Scott Arsenault; Neal T. Sullivan
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Paper Abstract

A method for effectively utilizing a Scanning Electron Microscope (SEM) for defect review and identification of unpatterned silicon particle wafers, following inspection on a laser-scanning defect inspection tool, is presented. The method involves prepatterning of bare silicon wafers at the extreme edges, typically less than 20 mm from the edge of a 200 mm wafer, using standard (I-Line) photolithographic processing. The registration marks created in this process are used for stage correlation between the SEM and laser-scanning wafer inspection tools. Use of these marks is demonstrated to result in a 50% improvement in particle location accuracy (mean + 2 sigma) over previously reported results. Further optimizations, including modeling and removal of systematic error sources through data transformations, demonstrate the additional improvements in particle location accuracy that are possible.

Paper Details

Date Published: 22 May 1995
PDF: 6 pages
Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); doi: 10.1117/12.209198
Show Author Affiliations
Scott Arsenault, Digital Equipment Corp. (United States)
Neal T. Sullivan, Digital Equipment Corp. (United States)

Published in SPIE Proceedings Vol. 2439:
Integrated Circuit Metrology, Inspection, and Process Control IX
Marylyn Hoy Bennett, Editor(s)

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