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Proceedings Paper

Lithoraphy for ULSI
Author(s): Shinji Okazaki
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Paper Abstract

ULSI has heavily depended on develops in optical lithography. However, optical lithography is now facing a major obstacle due to exposure wavelength limitations. To overcome this obstacle, not only the use of shorter wavelengths, but also such new technologies as super-resolution techniques, electron beams, and X-ray lithography are being intensively investigated. This paper reviews recent developments in these technologies and discusses the major issues. The difference in lithographic activities between Japan and the U.S. is also be discussed. Finally, recent developments in lithography for experimental 1 -Gb DRAMs are presented.

Paper Details

Date Published: 22 May 1995
PDF: 15 pages
Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); doi: 10.1117/12.209196
Show Author Affiliations
Shinji Okazaki, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 2439:
Integrated Circuit Metrology, Inspection, and Process Control IX
Marylyn Hoy Bennett, Editor(s)

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